Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures
نویسندگان
چکیده
منابع مشابه
Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures.
We demonstrate the selective area growth of GaN-(Al,Ga)N core-shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. Raman measurements relate this shift to compressive strain within the GaN core. On the nanoscale, cathodoluminescence spectroscopy and scann...
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ژورنال
عنوان ژورنال: Physical Review Applied
سال: 2020
ISSN: 2331-7019
DOI: 10.1103/physrevapplied.13.044034